All MOSFET. CS6N80ARR-G Datasheet

 

CS6N80ARR-G Datasheet and Replacement


   Type Designator: CS6N80ARR-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO262
 

 CS6N80ARR-G substitution

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CS6N80ARR-G Datasheet (PDF)

 ..1. Size:355K  wuxi china
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CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80 ARR-G General Description VDSS 800 V CS6N80 ARR-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 6.1. Size:675K  wuxi china
 cs6n80arh.pdf pdf_icon

CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:848K  wuxi china
 cs6n80a8.pdf pdf_icon

CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.1. Size:847K  crhj
 cs6n80f a9.pdf pdf_icon

CS6N80ARR-G

Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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Datasheet: VBA5311 , CS7N70A4R-G , VBA3638 , CS10N80AND , CS7N65FA9D , VBA3316 , VBA3222 , CS12N60A8R , RU7088R , VBA2658 , CS12N60FA9R , VBA2333 , CS12N65A8R , CS5N65FA9R , CS12N65FA9R , CS12N70A8H , CS13N50A8D .

History: AON6786 | CS11N70F | CS11N90V | IMW120R140M1H | IRF7831 | 2SK2531 | SLF7N65C

Keywords - CS6N80ARR-G MOSFET datasheet

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