SI2319DS-T1-GE3 Todos los transistores

 0.1. Size:866K  cn vbsemi
 si2319ds-t1-ge3.pdf

SI2319DS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter

 5.1. Size:1853K  kexin
 si2319ds-3.pdf

 6.1. Size:187K  vishay
 si2319ds.pdf

Si2319DS Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)b Available 0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0 - 40 0.130 at VGS = - 4.5 V - 2.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2319DS (C9)* *Marking Code Ordering Informati

 6.2. Size:1859K  kexin
 si2319ds.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2319DS (KI2319DS) SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4 -0.1 VDS (V) =-40V 3 ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 3 D 1.Gate 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Par