SI2319DS-T1-GE3 Datasheet and Replacement. Cross Reference Search

SI2319DS-T1-GE3 Datasheet (PDF)

0.1. Size:866K cn vbsemi
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SI2319DS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

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SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-40V ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V)1 2 RDS(ON) 130m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 2 2. Source3. Drain Absolute Maximum Ratings Ta = 25

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Si2319DSVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)bAvailable0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0- 400.130 at VGS = - 4.5 V - 2.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2319DS (C9)**Marking CodeOrdering Informati

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SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) =-40V3 ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1G 13 D1.Gate2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Par

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .