All MOSFET. SI2319DS-T1-GE3 Datasheet

 

SI2319DS-T1-GE3 Datasheet and Replacement


   Type Designator: SI2319DS-T1-GE3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT23
 

 SI2319DS-T1-GE3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SI2319DS-T1-GE3 Datasheet (PDF)

 0.1. Size:866K  cn vbsemi
si2319ds-t1-ge3.pdf pdf_icon

SI2319DS-T1-GE3

SI2319DS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

 5.1. Size:1853K  kexin
si2319ds-3.pdf pdf_icon

SI2319DS-T1-GE3

SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-40V ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V)1 2 RDS(ON) 130m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 2 2. Source3. Drain Absolute Maximum Ratings Ta = 25

 6.1. Size:187K  vishay
si2319ds.pdf pdf_icon

SI2319DS-T1-GE3

Si2319DSVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)bAvailable0.082 at VGS = - 10 V TrenchFET Power MOSFET - 3.0- 400.130 at VGS = - 4.5 V - 2.4APPLICATIONS Load SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2319DS (C9)**Marking CodeOrdering Informati

 6.2. Size:1859K  kexin
si2319ds.pdf pdf_icon

SI2319DS-T1-GE3

SMD Type MOSFETP-Channel Enhancement MOSFET SI2319DS (KI2319DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) =-40V3 ID =-3.0A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1G 13 D1.Gate2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Par

Datasheet: CS55N06A4 , VB2355 , VB264K , VB1695 , VB2103K , SI2318CDS-T1-GE3 , SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , IRF3710 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , SI2323DS-T1 , SI2338DS-T1-GE3 , CS4N80FA9HD , VB2290 , CS4N80A4HD-G , VB8338 .

History: IRLP3034 | STF5N52U | IXFB44N100P | H90N71P | IPD90N04S4-02 | SFF7002KA2GW | ASDM30N65E

Keywords - SI2319DS-T1-GE3 MOSFET datasheet

 SI2319DS-T1-GE3 cross reference
 SI2319DS-T1-GE3 equivalent finder
 SI2319DS-T1-GE3 lookup
 SI2319DS-T1-GE3 substitution
 SI2319DS-T1-GE3 replacement

 

 
Back to Top

 


 
.