SI2323CDS-T1-GE3 Todos los transistores

 0.1. Size:866K  cn vbsemi
 si2323cds-t1-ge3.pdf

SI2323CDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter

 5.1. Size:94K  vishay
 si2323cd si2323cds.pdf

Si2323CDS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.039 at VGS = - 4.5 V TrenchFET Power MOSFET - 6e 100 % Rg Tested - 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC 0.063 at VGS = - 1.8 V - 5.1 APPLI

 5.2. Size:217K  vishay
 si2323cds.pdf

Si2323CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) 100 % Rg Tested ID (A)a Qg (Typ.) Material categorization 0.039 at VGS = -4.5 V -6e For definitions of compliance please see -20 0.050 at VGS = -2.5 V -5.8 9 nC www.vishay.com/doc?99912 0.063 at VGS = -1.8 V -5.1 APPLICATIONS