SI2323CDS-T1-GE3 Datasheet and Replacement
Type Designator: SI2323CDS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
SI2323CDS-T1-GE3 Datasheet (PDF)
si2323cds-t1-ge3.pdf

SI2323CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter
si2323cd si2323cds.pdf

Si2323CDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = - 4.5 V TrenchFET Power MOSFET- 6e 100 % Rg Tested- 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC0.063 at VGS = - 1.8 V - 5.1APPLI
si2323cds.pdf

Si2323CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () 100 % Rg TestedID (A)a Qg (Typ.) Material categorization:0.039 at VGS = -4.5 V -6eFor definitions of compliance please see-20 0.050 at VGS = -2.5 V -5.8 9 nCwww.vishay.com/doc?999120.063 at VGS = -1.8 V -5.1APPLICATIONS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - SI2323CDS-T1-GE3 MOSFET datasheet
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SI2323CDS-T1-GE3 replacement
History: VBNC1303 | IRFS4010PBF



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