CS4N80FA9HD Todos los transistores

Silicon N-Channel Power MOSFET R CS4N80F A9HD General Description VDSS 800 V CS4N80F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

N R N-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10V Qg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10V Qg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10V Qg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N80F, CS4N80P,CS4N80U,CS4N80D 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N80F TO-220