Справочник MOSFET. CS4N80FA9HD

 

CS4N80FA9HD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS4N80FA9HD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 82 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для CS4N80FA9HD

 

 

CS4N80FA9HD Datasheet (PDF)

 ..1. Size:380K  wuxi china
 cs4n80fa9hd.pdf

CS4N80FA9HD CS4N80FA9HD

Silicon N-Channel Power MOSFET R CS4N80F A9HD General Description VDSS 800 V CS4N80F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:1321K  jilin sino
 jcs4n80ch jcs4n80fh.pdf

CS4N80FA9HD CS4N80FA9HD

N RN-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

 7.2. Size:3308K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b jcs4n80s.pdf

CS4N80FA9HD CS4N80FA9HD

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 7.3. Size:1170K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b.pdf

CS4N80FA9HD CS4N80FA9HD

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 7.4. Size:1385K  jilin sino
 jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80s jcs4n80b.pdf

CS4N80FA9HD CS4N80FA9HD

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

 7.5. Size:702K  convert
 cs4n80f cs4n80p cs4n80u cs4n80d.pdf

CS4N80FA9HD CS4N80FA9HD

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N80F, CS4N80P,CS4N80U,CS4N80D800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N80F TO-220

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