CS4N80FA9HD - аналоги, даташиты, параметры транзистора

CS4N80FA9HD Datasheet (PDF)

..1. Size:380K wuxi china
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Silicon N-Channel Power MOSFET R CS4N80F A9HD General Description VDSS 800 V CS4N80F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

7.1. Size:1321K jilin sino
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N RN-CHANNEL MOSFET JCS4N80H Package MAIN CHARACTERISTICS ID 4 A VDSS 800 V Rdson-max 2.5 @Vgs=10V Qg-typ 14nC APPLICATIONS High frequency switch mode power supply Electronic ballasts LED LED power supply

7.2. Size:3308K jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b jcs4n80s.pdf pdf_icon

N RN-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge

7.3. Size:1170K jilin sino
jcs4n80v jcs4n80r jcs4n80f jcs4n80c jcs4n80b.pdf pdf_icon

N R N-CHANNEL MOSFET JCS4N80C Package MAIN CHARACTERISTICS 4A ID 800 V VDSS Rdson-max 2.6 @Vgs=10VQg-typ 29.5nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge