CS25N06B8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS25N06B8  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 117 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: TO220AB

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CS25N06B8 datasheet

 6.1. Size:697K  wuxi china
 cs25n06b4.pdf pdf_icon

CS25N06B8

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

 7.1. Size:708K  crhj
 cs25n06 b3.pdf pdf_icon

CS25N06B8

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.2. Size:696K  crhj
 cs25n06 b8.pdf pdf_icon

CS25N06B8

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.3. Size:697K  crhj
 cs25n06 b4.pdf pdf_icon

CS25N06B8

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

MOSTRAR MÁS

Otros transistores... CS4N80A3HD-G, CS4N70FA9R, VBA1615, VBA1630, CS24N40FA9H, CS24N50ANHD, CS25N06B3, CS25N06B4, IRF1010E, CS4N65FA9HD, CS4N65A3HD1-G, SI2369DS-T1, SI2399CDS-T1, CS460FA9H, SI3407DV-T1, SI3456DDV-T1, SI3460DV-T1