CS25N06B8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

Silicon N-Channel Power MOSFET R CS25N06 C4 General Description CS25N06 C4 the silicon N-channel Enhanced VDSS 60 V VDMOSFETs, is obtained by the high density Trench ID 25 A technology which reduce the conduction loss, improve switching PD 36.2 W RDS(ON)Typ 23 m performance and enhance the avalanche energy. This device is suitable for use as a load switch and P