CS25N06B8 MOSFET Datasheet: N-Ch, 60V, 25A. Full specification with pinout and replacement list

CS25N06B8 Specs and Replacement

Type Designator: CS25N06B8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO220AB

CS25N06B8 substitution

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CS25N06B8 datasheet

6.1. Size:697K wuxi china
cs25n06b4.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25 ) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s... See More ⇒

7.1. Size:708K crhj
cs25n06 b3.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

7.2. Size:696K crhj
cs25n06 b8.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

7.3. Size:697K crhj
cs25n06 b4.pdf pdf_icon