SI3407DV-T1 Todos los transistores

 

SI3407DV-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI3407DV-T1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TSOP6
 

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SI3407DV-T1 Datasheet (PDF)

 ..1. Size:858K  cn vbsemi
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SI3407DV-T1

Si3407DV-T1www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP

 6.1. Size:192K  vishay
si3407dv.pdf pdf_icon

SI3407DV-T1

Si3407DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET- 20 21 nC PWM Optimized0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9

 8.1. Size:591K  mcc
si3407.pdf pdf_icon

SI3407DV-T1

SI3407Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -5

 9.1. Size:98K  vishay
si3403dv.pdf pdf_icon

SI3407DV-T1

Si3403DVVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.07 at VGS = - 4.5 V - 5- 20 4.5 nC PWM Optimized, Low Qgd/Qgs Ratio0.105 at VGS = - 2.5 V - 4.1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switc

Otros transistores... CS25N06B3 , CS25N06B4 , CS25N06B8 , CS4N65FA9HD , CS4N65A3HD1-G , SI2369DS-T1 , SI2399CDS-T1 , CS460FA9H , 2SK3568 , SI3456DDV-T1 , SI3460DV-T1 , SI3477DV-T1-GE3 , SI3585DV-T1 , CS2N70A3R1-G , SDM9433 , SDM9435A , SDM9926 .

History: NCEP023N10LL | AO4900 | 2SK981A | HYG025N04NA1C2 | NDB7060L | SSM5H90ATU | KF12N60P

 

 
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