CS2N65_A3 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS2N65_A3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 31 pF
Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm
Package: TO251
CS2N65_A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS2N65_A3 Datasheet (PDF)
1.1. cs2n65 a3hy.pdf 
Size:242K _crhj
Silicon N-Channel Power MOSFET R ○ CS2N65 A3HY General Description： VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
1.2. cs2n65 a3.pdf Size:235K _crhj
Silicon N-Channel Power MOSFET R ○ CS2N65 A3 General Description： VDSS 650 V CS2N65 A3, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
2.1. cs2n65 a4hy.pdf Size:545K _crhj
Silicon N-Channel Power MOSFET R ○ CS2N65 A4HY General Description： VDSS 650 V CS2N65 A4HY, the silicon N-channel Enhanced ID 2 A PD(TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Datasheet: CS25N06_B3 , CS25N06_B4 , CS25N06_B8 , CS2N60_A3H , CS2N60_A4H , CS2N60_A4T , CS2N60_A7H , CS2N60F_A9H , IRFP4332 , CS2N65_A3HY , CS2N65_A4HY , CS2N65F_A9HY , CS2N70_A3R , CS2N70_A3R1-G , CS2N70_A4 , CS2N70_A6 , CS2N70F_A9 .
