SI3407DV-T1 PDF and Equivalents Search

 

SI3407DV-T1 Specs and Replacement

Type Designator: SI3407DV-T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSOP6

SI3407DV-T1 substitution

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SI3407DV-T1 datasheet

 ..1. Size:858K  cn vbsemi
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SI3407DV-T1

Si3407DV-T1 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P... See More ⇒

 6.1. Size:192K  vishay
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SI3407DV-T1

Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET - 20 21 nC PWM Optimized 0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9... See More ⇒

 8.1. Size:591K  mcc
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SI3407DV-T1

SI3407 Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" P-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Storage Temperature Range -5... See More ⇒

 9.1. Size:98K  vishay
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SI3407DV-T1

Si3403DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.07 at VGS = - 4.5 V - 5 - 20 4.5 nC PWM Optimized, Low Qgd/Qgs Ratio 0.105 at VGS = - 2.5 V - 4.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switc... See More ⇒

Detailed specifications: CS25N06B3, CS25N06B4, CS25N06B8, CS4N65FA9HD, CS4N65A3HD1-G, SI2369DS-T1, SI2399CDS-T1, CS460FA9H, 4435, SI3456DDV-T1, SI3460DV-T1, SI3477DV-T1-GE3, SI3585DV-T1, CS2N70A3R1-G, SDM9433, SDM9435A, SDM9926

Keywords - SI3407DV-T1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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