SI3460DV-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI3460DV-T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de SI3460DV-T1 MOSFET
SI3460DV-T1 Datasheet (PDF)
si3460dv-t1.pdf

SI3460DV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/
si3460dv.pdf

Si3460DVVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/ECTSOP-6(1, 2, 5, 6) DTop View1 6
si3460dd si3460ddv.pdf

Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL
si3460ddv.pdf

Si3460DDVVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/ECAPPL
Otros transistores... CS25N06B8 , CS4N65FA9HD , CS4N65A3HD1-G , SI2369DS-T1 , SI2399CDS-T1 , CS460FA9H , SI3407DV-T1 , SI3456DDV-T1 , IRF9540N , SI3477DV-T1-GE3 , SI3585DV-T1 , CS2N70A3R1-G , SDM9433 , SDM9435A , SDM9926 , CS2N80A3HY , NP32N055I .
History: IPI120N08S4-04 | NTTFS004N04C | NCEP080N85 | BRFL12N65S | G48N03D3 | WMO13P06T1 | NVATS5A302PLZ
History: IPI120N08S4-04 | NTTFS004N04C | NCEP080N85 | BRFL12N65S | G48N03D3 | WMO13P06T1 | NVATS5A302PLZ



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