SI3460DV-T1 MOSFET Datasheet: N-Ch, 30V, 5.5A. Full specification with pinout and replacement list

SI3460DV-T1 Specs and Replacement

Type Designator: SI3460DV-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSOP6

SI3460DV-T1 substitution

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SI3460DV-T1 datasheet

..1. Size:862K cn vbsemi
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SI3460DV-T1 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/... See More ⇒

6.1. Size:177K vishay
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Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.027 at VGS = 4.5 V 6.8 TrenchFET Power MOSFET 0.032 at VGS = 2.5 V 20 6.3 100 % Rg Tested 0.038 at VGS = 1.8 V 5.7 Compliant to RoHS directive 2002/95/EC TSOP-6 (1, 2, 5, 6) D Top View 1 6 ... See More ⇒

7.1. Size:612K vishay
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Si3460DDV Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)d Qg (Typ.) Definition 0.028 at VGS = 4.5 V 7.9 TrenchFET Power MOSFET 20 0.032 at VGS = 2.5 V 7.4 6.7 nC 100 % Rg Tested 100 % UIS Tested 0.038 at VGS = 1.8 V 6.8 Compliant to RoHS Directive 2002/95/EC APPL... See More ⇒

7.2. Size:612K vishay
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