SUD25N06-45L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUD25N06-45L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET SUD25N06-45L

SUD25N06-45L Datasheet (PDF)

..1. Size:88K vishay
sud25n06-45l.pdf

SUD25N06-45LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 10 V 2560600.045 @ VGS = 4.5 V 22DTO-252GDrain Connected to TabG D STop ViewSOrder Number:SUD25N06-45LN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage

..2. Size:1376K cn vbsemi
sud25n06-45l.pdf

SUD25N06-45Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

7.1. Size:50K vishay
sud25n04-25 sud25n04.pdf

SUD25N04-25Vishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.025 @ VGS = 10 V 25400.040 @ VGS = 4.5 V 20DTO-252GDrain Connected to TabG D STop ViewOrder Number:SSUD25N04-25N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 40VGate-Sour

8.1. Size:145K vishay
sud25n15.pdf

SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec

8.2. Size:162K vishay
sud25n15-52.pdf

8.3. Size:192K inchange semiconductor
sud25n15-52.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52FEATURESTrenchFET Power MOSFET175 Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV

8.4. Size:208K inchange semiconductor
sud25n15-52-e3.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52-E3FEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 V

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK2906-01

Liste

Recientemente añadidas las descripciónes de los transistores: