SUD25N06-45L MOSFET. Datasheet pdf. Equivalent
Type Designator: SUD25N06-45L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: TO252
SUD25N06-45L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUD25N06-45L Datasheet (PDF)
sud25n06-45l.pdf
SUD25N06-45LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 10 V 2560600.045 @ VGS = 4.5 V 22DTO-252GDrain Connected to TabG D STop ViewSOrder Number:SUD25N06-45LN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage
sud25n06-45l.pdf
SUD25N06-45Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis
sud25n04-25 sud25n04.pdf
SUD25N04-25Vishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.025 @ VGS = 10 V 25400.040 @ VGS = 4.5 V 20DTO-252GDrain Connected to TabG D STop ViewOrder Number:SSUD25N04-25N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 40VGate-Sour
sud25n15.pdf
SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec
sud25n15-52.pdf
SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec
sud25n15-52.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52FEATURESTrenchFET Power MOSFET175 Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV
sud25n15-52-e3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52-E3FEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 V
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
