CS3410B4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS3410B4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO252

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CS3410B4 Datasheet (PDF)

7.1. Size:247K wuxi china
cs3410b3.pdf

Silicon N-Channel Power MOSFET R CS3410 B3 General Description VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

8.1. Size:244K crhj
cs3410 b4.pdf

Silicon N-Channel Power MOSFET R CS3410 B4 General Description VDSS 100 V CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

8.2. Size:232K crhj
cs3410 br.pdf

Silicon N-Channel Power MOSFET R CS3410 BR General Description VDSS 100 V CS3410 BR, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

8.3. Size:247K crhj
cs3410 b3.pdf