All MOSFET. CS3410B4 Datasheet

 

CS3410B4 Datasheet and Replacement


   Type Designator: CS3410B4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252
 

 CS3410B4 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CS3410B4 Datasheet (PDF)

 7.1. Size:247K  wuxi china
 cs3410b3.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 B3 General Description VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:244K  crhj
 cs3410 b4.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 B4 General Description VDSS 100 V CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:232K  crhj
 cs3410 br.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 BR General Description VDSS 100 V CS3410 BR, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:247K  crhj
 cs3410 b3.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 B3 General Description VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

SHOW MORE

Datasheet: CS2N70A3R1-G , SDM9433 , SDM9435A , SDM9926 , CS2N80A3HY , NP32N055I , CS45N06A4 , SUD25N06-45L , IRFP450 , CS3410BR , RSS065N06 , RSS090P03 , CS3N40A23 , CS3N40A3H , CS3N40A4H , CS3N50B3 , ISL9N306AS3S .

History: MTDN5820Z6 | SM8009NSF

Keywords - CS3410B4 MOSFET datasheet

 CS3410B4 cross reference
 CS3410B4 equivalent finder
 CS3410B4 lookup
 CS3410B4 substitution
 CS3410B4 replacement

 

 
Back to Top

 


 
.