All MOSFET. CS3410B4 Datasheet

 

CS3410B4 Datasheet and Replacement


   Type Designator: CS3410B4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252
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CS3410B4 Datasheet (PDF)

 7.1. Size:247K  wuxi china
 cs3410b3.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 B3 General Description VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:244K  crhj
 cs3410 b4.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 B4 General Description VDSS 100 V CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:232K  crhj
 cs3410 br.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 BR General Description VDSS 100 V CS3410 BR, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:247K  crhj
 cs3410 b3.pdf pdf_icon

CS3410B4

Silicon N-Channel Power MOSFET R CS3410 B3 General Description VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - CS3410B4 MOSFET datasheet

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