CS3N40A23 Todos los transistores

 

CS3N40A23 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS3N40A23
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
   Paquete / Cubierta: SOT223

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CS3N40A23 Datasheet (PDF)

 7.1. Size:189K  wuxi china
cs3n40a3h.pdf

CS3N40A23
CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:189K  crhj
cs3n40 a3h.pdf

CS3N40A23
CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:195K  crhj
cs3n40 a4h.pdf

CS3N40A23
CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A4H General Description VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:175K  crhj
cs3n40 a23.pdf

CS3N40A23
CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A23 General Description VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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