Справочник MOSFET. CS3N40A23

 

CS3N40A23 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS3N40A23
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 21 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
   Тип корпуса: SOT223
 

 Аналог (замена) для CS3N40A23

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS3N40A23 Datasheet (PDF)

 7.1. Size:189K  wuxi china
cs3n40a3h.pdfpdf_icon

CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:189K  crhj
cs3n40 a3h.pdfpdf_icon

CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:195K  crhj
cs3n40 a4h.pdfpdf_icon

CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A4H General Description VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:175K  crhj
cs3n40 a23.pdfpdf_icon

CS3N40A23

Silicon N-Channel Power MOSFET R CS3N40 A23 General Description VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Другие MOSFET... CS2N80A3HY , NP32N055I , CS45N06A4 , SUD25N06-45L , CS3410B4 , CS3410BR , RSS065N06 , RSS090P03 , IRFZ24N , CS3N40A3H , CS3N40A4H , CS3N50B3 , ISL9N306AS3S , CS3N50B4 , VB2703K , VB3222 , VB4290 .

History: STB12NM50-1 | STB11NM80T4 | PSMN017-30EL | PS75N75 | JCS10N70F | STP62NS04Z | FDD3N50NZTM

 

 
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