CS3R50A4 Todos los transistores

 

CS3R50A4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS3R50A4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 34 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO252

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CS3R50A4 datasheet

 7.1. Size:257K  wuxi china
 cs3r50a3.pdf pdf_icon

CS3R50A4

Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.1. Size:250K  crhj
 cs3r50 a4.pdf pdf_icon

CS3R50A4

Silicon N-Channel Power MOSFET R CS3R50 A4 General Description VDSS 500 V CS3R50 A4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:241K  crhj
 cs3r50f a9.pdf pdf_icon

CS3R50A4

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.3. Size:258K  crhj
 cs3r50 a3.pdf pdf_icon

CS3R50A4

Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

MOSTRAR MÁS

Otros transistores... RYU002N05T306 , CS3N80ARH , NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL , NCE6602 , NDF02N60ZG , P60NF06 , NTR4503NT1G , CS40N20A8 , CS40N20ANH , CS40N20FA9E , CS40N20FA9H , CS2N65FA9 , CS4N60A3R , SI4425DY-T1-E3 .

History: 2SK1222 | PJM3401PSA | CS8N80A8H | SMK0825FZ | APM2605C | AP4532GM-HF | BSR302N

 

 

 

 

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