CS3R50A4 - описание и поиск аналогов

Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Silicon N-Channel Power MOSFET R CS3R50 A4 General Description VDSS 500 V CS3R50 A4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe