CS40N20A8 Todos los transistores

 

CS40N20A8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS40N20A8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de CS40N20A8 MOSFET

- Selecciónⓘ de transistores por parámetros

 

CS40N20A8 datasheet

 ..1. Size:216K  wuxi china
cs40n20a8.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:216K  crhj
cs40n20 a8.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.2. Size:233K  crhj
cs40n20 anh.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 7.3. Size:222K  crhj
cs40n20f a9h.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

Otros transistores... NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL , NCE6602 , NDF02N60ZG , CS3R50A4 , NTR4503NT1G , AO3400A , CS40N20ANH , CS40N20FA9E , CS40N20FA9H , CS2N65FA9 , CS4N60A3R , SI4425DY-T1-E3 , CS2N65A4 , CS4N60A4R .

History: APM3095PU | STD3PK50Z | AO4292E | 30N06G-TF3-T | SI2328A | AGM405AP1 | 2SK3575-S

 

 

 

 

↑ Back to Top
.