CS40N20A8 Datasheet. Specs and Replacement

Type Designator: CS40N20A8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO220AB

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CS40N20A8 datasheet

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CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.1. Size:216K  crhj
 cs40n20 a8.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.2. Size:233K  crhj
 cs40n20 anh.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario... See More ⇒

 7.3. Size:222K  crhj
 cs40n20f a9h.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒

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Detailed specifications: NTD20N06T4, NTD24N06LT4G, NTD25P03LG, NDS9945-NL, NCE6602, NDF02N60ZG, CS3R50A4, NTR4503NT1G, 60N06, CS40N20ANH, CS40N20FA9E, CS40N20FA9H, CS2N65FA9, CS4N60A3R, SI4425DY-T1-E3, CS2N65A4, CS4N60A4R

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