All MOSFET. CS40N20_A8 Datasheet

 

CS40N20_A8 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS40N20_A8

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: TO220AB

CS40N20_A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS40N20_A8 Datasheet (PDF)

1.1. cs40n20 a8.pdf Size:216K _crhj

CS40N20_A8
CS40N20_A8

Silicon N-Channel Power MOSFET R ○ CS40N20 A8 General Description: VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.2. cs40n20 anh.pdf Size:233K _crhj

CS40N20_A8
CS40N20_A8

Silicon N-Channel Power MOSFET R ○ CS40N20 ANH General Description: VDSS 200 V CS40N20 ANH , the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 3.1. cs40n20f a9h.pdf Size:222K _crhj

CS40N20_A8
CS40N20_A8

Silicon N-Channel Power MOSFET R ○ CS40N20F A9H General Description: VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

3.2. cs40n20f a9e.pdf Size:216K _crhj

CS40N20_A8
CS40N20_A8

Silicon N-Channel Power MOSFET R ○ CS40N20F A9E General Description: VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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