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CS40N20A8 Spec and Replacement


   Type Designator: CS40N20A8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO220AB

 CS40N20A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS40N20A8 Specs

 ..1. Size:216K  wuxi china
cs40n20a8.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.1. Size:216K  crhj
cs40n20 a8.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.2. Size:233K  crhj
cs40n20 anh.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario... See More ⇒

 7.3. Size:222K  crhj
cs40n20f a9h.pdf pdf_icon

CS40N20A8

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒

Detailed specifications: NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL , NCE6602 , NDF02N60ZG , CS3R50A4 , NTR4503NT1G , AO3400A , CS40N20ANH , CS40N20FA9E , CS40N20FA9H , CS2N65FA9 , CS4N60A3R , SI4425DY-T1-E3 , CS2N65A4 , CS4N60A4R .

History: SML80J44 | HAF2001

Keywords - CS40N20A8 MOSFET specs

 CS40N20A8 cross reference
 CS40N20A8 equivalent finder
 CS40N20A8 lookup
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History: SML80J44 | HAF2001

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