CS40N20ANH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS40N20ANH  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO3PN

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CS40N20ANH datasheet

 6.1. Size:216K  wuxi china
 cs40n20a8.pdf pdf_icon

CS40N20ANH

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:216K  crhj
 cs40n20 a8.pdf pdf_icon

CS40N20ANH

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.2. Size:233K  crhj
 cs40n20 anh.pdf pdf_icon

CS40N20ANH

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 7.3. Size:222K  crhj
 cs40n20f a9h.pdf pdf_icon

CS40N20ANH

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

MOSTRAR MÁS

Otros transistores... NTD24N06LT4G, NTD25P03LG, NDS9945-NL, NCE6602, NDF02N60ZG, CS3R50A4, NTR4503NT1G, CS40N20A8, IRFZ46N, CS40N20FA9E, CS40N20FA9H, CS2N65FA9, CS4N60A3R, SI4425DY-T1-E3, CS2N65A4, CS4N60A4R, P2402CAG