CS40N20ANH
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS40N20ANH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO3PN
CS40N20ANH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS40N20ANH
Datasheet (PDF)
6.1. Size:216K wuxi china
cs40n20a8.pdf 
Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.1. Size:216K crhj
cs40n20 a8.pdf
Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.2. Size:233K crhj
cs40n20 anh.pdf
Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
7.3. Size:222K crhj
cs40n20f a9h.pdf
Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
7.4. Size:216K crhj
cs40n20f a9e.pdf
Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari
7.5. Size:800K convert
cs40n20f cs40n20p.pdf
nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package
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, CS40N20A8
, MMD60R360PRH
, CS40N20FA9E
, CS40N20FA9H
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, CS4N60A4R
, P2402CAG
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