JMTG100P03A Datasheet. Specs and Replacement

Type Designator: JMTG100P03A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 397 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: PDFN5X6-8L

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JMTG100P03A datasheet

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JMTG100P03A

-30V,-45A, 9.3m P-channel Power Trench MOSFET JMTG100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -45 A RDS(ON)_Typ(@VGS=-10V 6.5 mW Applications RDS(ON)_Typ(@VGS=-4.5V 9.3 mW Load Switch PWM Applica... See More ⇒

 7.1. Size:628K  jiejie micro
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JMTG100P03A

JMTG100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 30A Load Switch RDS(ON) ... See More ⇒

 7.2. Size:1285K  jiejie micro
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JMTG100P03A

60V, 55A, 8.9m N-channel Power Trench MOSFET JMTG100N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.7 mW RDS(ON)_Typ(@VGS=4.5V 8.9 mW Applications Load Switch ... See More ⇒

 7.3. Size:626K  jiejie micro
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JMTG100P03A

JMTG100N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 40A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: JMTG075C03D, JMTG080N04D, JMTG080P03A, JMTG100C03D, JMTG100N03A, JMTG100N04A, JMTG100N06A, JMTG100N06D, STP75NF75, JMSL1008AK, JMSL1008AKQ, JMSL1008AP, JMSL1008MKQ, JMSL1008PGQ, JMSL1009AG, JMSL1009AGQ, JMSL1009AK

Keywords - JMTG100P03A MOSFET specs

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