JMTG100P03A MOSFET Datasheet: P-Ch, 30V, 45A. Full specification with pinout and replacement list

JMTG100P03A Specs and Replacement

   Type Designator: JMTG100P03A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 397 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: PDFN5X6-8L

JMTG100P03A substitution

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JMTG100P03A datasheet

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-30V,-45A, 9.3m P-channel Power Trench MOSFET JMTG100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -45 A RDS(ON)_Typ(@VGS=-10V 6.5 mW Applications RDS(ON)_Typ(@VGS=-4.5V 9.3 mW Load Switch PWM Applica... See More ⇒

7.1. Size:628K jiejie micro
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JMTG100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 30A Load Switch RDS(ON) ... See More ⇒

7.2. Size:1285K jiejie micro
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60V, 55A, 8.9m N-channel Power Trench MOSFET JMTG100N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.7 mW RDS(ON)_Typ(@VGS=4.5V 8.9 mW Applications Load Switch ... See More ⇒

7.3. Size:626K jiejie micro
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