JMTG075C03D Datasheet. Specs and Replacement
Type Designator: JMTG075C03D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 162 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: PDFN5X6-8L-D
📄📄 Copy
- MOSFET ⓘ Cross-Reference Search
JMTG075C03D datasheet
8.1. Size:419K jiejie micro
jmtg070n06a.pdf 
JMTG070N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 70A Load Switch R ... See More ⇒
9.1. Size:575K 1
jmtg040n03a.pdf
JMTG040N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 30V, 80A Load Switch R ... See More ⇒
9.2. Size:1425K jiejie micro
jmtg050p03a.pdf
-30V, -80A, 5.2m P-channel Power Trench MOSFET JMTG050P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS -30 V 100% Vds TESTED VGS(th)_Typ -1.7 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -80 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 3.7 mW RDS(ON)_Typ(@VGS=-4.5V 5.2 mW Applications Load Swit... See More ⇒
9.3. Size:377K jiejie micro
jmtg016n04a.pdf
JMTG016N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 40V, 210A Load Switch R ... See More ⇒
9.4. Size:404K jiejie micro
jmtg060n06a.pdf
JMTG060N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,90 A Load Switch R ... See More ⇒
9.5. Size:1356K jiejie micro
jmtg060p03a.pdf
-30V, -111A, 5.8m P-channel Power Trench MOSFET JMTG060P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.8 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -111 A RDS(ON)_Typ(@VGS=-10V 3.8 mW RDS(ON)_Typ(@VGS=-4.5V 5.8 mW Applications Load Switch PWM Applicat... See More ⇒
9.6. Size:568K jiejie micro
jmtg080n04d.pdf
JMTG080N04D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 40V, 45A Load Switch RDS(ON) ... See More ⇒
9.7. Size:727K jiejie micro
jmtg062n04d.pdf
JMTG062N04D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 40V, 55A Load Switch RDS(ON) ... See More ⇒
9.8. Size:1358K jiejie micro
jmtg080p03a.pdf
-30V, -97A, 7.3m P-channel Power Trench MOSFET JMTG080P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -97 A RDS(ON)_Typ(@VGS=-10V 5.0 mW Applications RDS(ON)_Typ(@VGS=-4.5V 7.3 mW Load Switch PWM Applicatio... See More ⇒
9.9. Size:1238K jiejie micro
jmtg021n04a.pdf
40V, 199A, 1.9m N-channel Power Trench MOSFET JMTG021N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 199 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications RDS(ON)_Typ(@VGS=4.5V 1.9 mW Load Switch PWM Application ... See More ⇒
9.10. Size:1312K jiejie micro
jmtg030p02a.pdf
20V, -85A, 4.2m P-channel Power Trench MOSFET JMTG030P02A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 20 V 100% Vds Tested VGS(th)_Typ -0.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -85 A RDS(ON)_Typ(@VGS=-4.5V 2.3 mW RDS(ON)_Typ(@VGS=-2.5V 3.0 mW Applications RDS(ON)_Typ(@VGS=-1.8V 4.2 mW L... See More ⇒
9.11. Size:1070K jiejie micro
jmtg018n03a.pdf
30V, 130A, 2m N-channel Power Trench MOSFET JMTG018N03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 130 A RDS(ON)_Typ(@VGS=10V 1.5 mW Applications RDS(ON)_Typ(@VGS=4.5V 2.0 mW Load Switch PWM Application P... See More ⇒
9.12. Size:1121K jiejie micro
jmtg035n04l.pdf
40V, 100A, 3m N-channel Power Trench MOSFET JMTG035N04L Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 100 A RDS(ON)_Typ(@VGS=10V 2.4 mW Pb-free plating RDS(ON)_Typ(@VGS=4.5V 3.0 mW Applications Load Switch P... See More ⇒
9.13. Size:1076K jiejie micro
jmtg027n04a.pdf
40V, 190A, 1.8m N-channel Power Trench MOSFET JMTG027N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A RDS(ON)_Typ(@VGS=10V 1.8 mW Applications RDS(ON)_Typ(@VGS=8V 2.1 mW Load Switch PWM Application P... See More ⇒
9.14. Size:514K jiejie micro
jmtg055n04a.pdf
JMTG055N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 75A Load Switch RDS(ON) ... See More ⇒
9.15. Size:1182K jiejie micro
jmtg035n04a.pdf
40V, 100A, 3.0m N-channel Power Trench MOSFET JMTG035N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 100 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management D G S P... See More ⇒
9.16. Size:515K jiejie micro
jmtg040n03a.pdf
JMTG040N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 80A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMSL1006PGS, JMSL1008AC, JMSL1008AE, JMSL1008AG, JMSL1008AGQ, JMTG060P03A, JMTG062N04D, JMTG070N06A, IRFB4227, JMTG080N04D, JMTG080P03A, JMTG100C03D, JMTG100N03A, JMTG100N04A, JMTG100N06A, JMTG100N06D, JMTG100P03A
Keywords - JMTG075C03D MOSFET specs
JMTG075C03D cross reference
JMTG075C03D equivalent finder
JMTG075C03D pdf lookup
JMTG075C03D substitution
JMTG075C03D replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
