All MOSFET. NTD25P03LG Datasheet

 

NTD25P03LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD25P03LG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TO252

 NTD25P03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD25P03LG Datasheet (PDF)

 ..1. Size:837K  cn vbsemi
ntd25p03lg.pdf

NTD25P03LG
NTD25P03LG

NTD25P03LGwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-

 5.1. Size:160K  onsemi
ntd25p03l ntd25p03l1 ntd25p03lrlg.pdf

NTD25P03LG
NTD25P03LG

NTD25P03LPower MOSFET-25 Amp, -30 VoltLogic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and tohttp://onsemi.comwithstand high energy in the avalanche and commutation modes. Thesource-to-drain diode recovery time is comparable to a discrete fastV(BR)DSS RDS(on) Typ ID Maxrecovery diode.-30 V 51 mW @ 5.0 V -25 AFeatures Pb-Free Packag

 5.2. Size:112K  onsemi
ntd25p03l std25p03l.pdf

NTD25P03LG
NTD25P03LG

NTD25P03L, STD25P03LPower MOSFET-25 A, -30 V, Logic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.The source-to-drain diode recovery time is comparable to a discrete http://onsemi.comfast recovery diode.V(BR)DSS RDS(on) Typ ID MaxFeatures-30 V 51 mW @ 5.0 V -25 A S Prefix

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