NTD25P03LG Datasheet and Replacement
Type Designator: NTD25P03LG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 255 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TO252
NTD25P03LG substitution
NTD25P03LG Datasheet (PDF)
ntd25p03lg.pdf

NTD25P03LGwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-
ntd25p03l ntd25p03l1 ntd25p03lrlg.pdf

NTD25P03LPower MOSFET-25 Amp, -30 VoltLogic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and tohttp://onsemi.comwithstand high energy in the avalanche and commutation modes. Thesource-to-drain diode recovery time is comparable to a discrete fastV(BR)DSS RDS(on) Typ ID Maxrecovery diode.-30 V 51 mW @ 5.0 V -25 AFeatures Pb-Free Packag
ntd25p03l std25p03l.pdf

NTD25P03L, STD25P03LPower MOSFET-25 A, -30 V, Logic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.The source-to-drain diode recovery time is comparable to a discrete http://onsemi.comfast recovery diode.V(BR)DSS RDS(on) Typ ID MaxFeatures-30 V 51 mW @ 5.0 V -25 A S Prefix
Datasheet: VB4290 , VB5222 , CS3N90A3H1-G , RTR025N05T , RYU002N05T306 , CS3N80ARH , NTD20N06T4 , NTD24N06LT4G , IRFZ24N , NDS9945-NL , NCE6602 , NDF02N60ZG , CS3R50A4 , NTR4503NT1G , CS40N20A8 , CS40N20ANH , CS40N20FA9E .
Keywords - NTD25P03LG MOSFET datasheet
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History: BLM9926 | LNN06R140



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