JMTG100N03A Datasheet. Specs and Replacement

Type Designator: JMTG100N03A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: PDFN5X6-8L

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JMTG100N03A datasheet

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JMTG100N03A

JMTG100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 30A Load Switch RDS(ON) ... See More ⇒

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JMTG100N03A

60V, 55A, 8.9m N-channel Power Trench MOSFET JMTG100N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.7 mW RDS(ON)_Typ(@VGS=4.5V 8.9 mW Applications Load Switch ... See More ⇒

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JMTG100N03A

JMTG100N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 40A Load Switch RDS(ON) ... See More ⇒

 5.3. Size:1303K  jiejie micro
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JMTG100N03A

60V, 33A, 11.7m Dual N-channel Power Trench MOSFET JMTG100N06D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 33 A RDS(ON)_Typ(@VGS=10V 10.4 mW RDS(ON)_Typ(@VGS=4.5V 11.7 mW Applications Load Switch PWM Applicatio... See More ⇒

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Detailed specifications: JMSL1008AGQ, JMTG060P03A, JMTG062N04D, JMTG070N06A, JMTG075C03D, JMTG080N04D, JMTG080P03A, JMTG100C03D, IRF630, JMTG100N04A, JMTG100N06A, JMTG100N06D, JMTG100P03A, JMSL1008AK, JMSL1008AKQ, JMSL1008AP, JMSL1008MKQ

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