NDS9945-NL Datasheet and Replacement. Cross Reference Search

NDS9945-NL Datasheet (PDF)

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NDS9945-NLwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

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May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 N-Channel enhancement mode power field effect3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V,transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.200 @ VGS = 4.5 V.cell density, DMOS technology. This very high densityprocess is especially tailored to

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January 2010NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide

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May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.5 A, 20 V RDS(ON) = 100 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 190 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ra