NDS9945-NL PDF and Equivalents Search

 

NDS9945-NL Specs and Replacement

Type Designator: NDS9945-NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO8

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NDS9945-NL datasheet

 ..1. Size:915K  cn vbsemi
nds9945-nl.pdf pdf_icon

NDS9945-NL

NDS9945-NL www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann... See More ⇒

 7.1. Size:77K  fairchild semi
nds9945.pdf pdf_icon

NDS9945-NL

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.200 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to ... See More ⇒

 8.1. Size:258K  fairchild semi
nds9948.pdf pdf_icon

NDS9945-NL

January 2010 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ... See More ⇒

 8.2. Size:141K  fairchild semi
nds9947.pdf pdf_icon

NDS9945-NL

May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.5 A, 20 V RDS(ON) = 100 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 190 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ra... See More ⇒

Detailed specifications: VB5222, CS3N90A3H1-G, RTR025N05T, RYU002N05T306, CS3N80ARH, NTD20N06T4, NTD24N06LT4G, NTD25P03LG, IRFZ24N, NCE6602, NDF02N60ZG, CS3R50A4, NTR4503NT1G, CS40N20A8, CS40N20ANH, CS40N20FA9E, CS40N20FA9H

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