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NDS9945-NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS9945-NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.3 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SO8
 

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NDS9945-NL Datasheet (PDF)

 ..1. Size:915K  cn vbsemi
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NDS9945-NL

NDS9945-NLwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

 7.1. Size:77K  fairchild semi
nds9945.pdf pdf_icon

NDS9945-NL

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 N-Channel enhancement mode power field effect3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V,transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.200 @ VGS = 4.5 V.cell density, DMOS technology. This very high densityprocess is especially tailored to

 8.1. Size:258K  fairchild semi
nds9948.pdf pdf_icon

NDS9945-NL

January 2010NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide

 8.2. Size:141K  fairchild semi
nds9947.pdf pdf_icon

NDS9945-NL

May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.5 A, 20 V RDS(ON) = 100 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 190 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ra

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History: SFD347N100C2 | SI2301 | WMK15N65C2 | SSF65R120S2 | D7509 | KMB7D0NP30Q | IRFR6215

 

 
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