All MOSFET. JMTG100N04A Datasheet

 

JMTG100N04A Datasheet and Replacement


   Type Designator: JMTG100N04A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
   Package: PDFN5X6-8L
 

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JMTG100N04A Datasheet (PDF)

 ..1. Size:626K  jiejie micro
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JMTG100N04A

JMTG100N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 40A Load SwitchRDS(ON)

 5.1. Size:628K  jiejie micro
 jmtg100n03a.pdf pdf_icon

JMTG100N04A

JMTG100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 30A Load SwitchRDS(ON)

 5.2. Size:1285K  jiejie micro
 jmtg100n06a.pdf pdf_icon

JMTG100N04A

60V, 55A, 8.9m N-channel Power Trench MOSFETJMTG100N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.7 mWRDS(ON)_Typ(@VGS=4.5V 8.9 mWApplications Load Switch

 5.3. Size:1303K  jiejie micro
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JMTG100N04A

60V, 33A, 11.7m Dual N-channel Power Trench MOSFETJMTG100N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 33 ARDS(ON)_Typ(@VGS=10V 10.4 mWRDS(ON)_Typ(@VGS=4.5V 11.7 mWApplications Load Switch PWM Applicatio

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Datasheet: JMTG060P03A , JMTG062N04D , JMTG070N06A , JMTG075C03D , JMTG080N04D , JMTG080P03A , JMTG100C03D , JMTG100N03A , 7N65 , JMTG100N06A , JMTG100N06D , JMTG100P03A , JMSL1008AK , JMSL1008AKQ , JMSL1008AP , JMSL1008MKQ , JMSL1008PGQ .

History: JMTG100C03D | JMTG100N03A

Keywords - JMTG100N04A MOSFET datasheet

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