JMTG100C03D Datasheet and Replacement
Type Designator: JMTG100C03D
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 142 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5X6-8L-D
JMTG100C03D substitution
JMTG100C03D Datasheet (PDF)
jmtg100c03d.pdf
JMTG100C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 12A Battery ProtectionR
jmtg100n03a.pdf
JMTG100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 30A Load SwitchRDS(ON)
jmtg100n06a.pdf
60V, 55A, 8.9m N-channel Power Trench MOSFETJMTG100N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.7 mWRDS(ON)_Typ(@VGS=4.5V 8.9 mWApplications Load Switch
jmtg100n04a.pdf
JMTG100N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 40A Load SwitchRDS(ON)
Datasheet: JMSL1008AG , JMSL1008AGQ , JMTG060P03A , JMTG062N04D , JMTG070N06A , JMTG075C03D , JMTG080N04D , JMTG080P03A , AON7408 , JMTG100N03A , JMTG100N04A , JMTG100N06A , JMTG100N06D , JMTG100P03A , JMSL1008AK , JMSL1008AKQ , JMSL1008AP .
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