JMTG100C03D Specs and Replacement
Type Designator: JMTG100C03D
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 142 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5X6-8L-D
JMTG100C03D substitution
JMTG100C03D datasheet
jmtg100c03d.pdf
JMTG100C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 30V, 12A Battery Protection R ... See More ⇒
jmtg100n03a.pdf
JMTG100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 30A Load Switch RDS(ON) ... See More ⇒
jmtg100n06a.pdf
60V, 55A, 8.9m N-channel Power Trench MOSFET JMTG100N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.7 mW RDS(ON)_Typ(@VGS=4.5V 8.9 mW Applications Load Switch ... See More ⇒
jmtg100n04a.pdf
JMTG100N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 40A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMSL1008AG , JMSL1008AGQ , JMTG060P03A , JMTG062N04D , JMTG070N06A , JMTG075C03D , JMTG080N04D , JMTG080P03A , 7N65 , JMTG100N03A , JMTG100N04A , JMTG100N06A , JMTG100N06D , JMTG100P03A , JMSL1008AK , JMSL1008AKQ , JMSL1008AP .
Keywords - JMTG100C03D MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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