JMSL1008AGQ MOSFET Datasheet: N-Ch, 100V, 93A. Full specification with pinout and replacement list

JMSL1008AGQ Specs and Replacement

   Type Designator: JMSL1008AGQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 93 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: PDFN5X6-8L

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JMSL1008AGQ datasheet

..1. Size:301K jiejie micro
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JMSL1008AGQ 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 88 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.0 m RDS(ON)_Typ (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant AEC-Q101 ... See More ⇒

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JMSL1008AG 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 93 A RDS(ON) (@ VGS = 10V) 6.0 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 8.0 m Halogen-free and RoHS-compliant Applications Power Managerment... See More ⇒

5.1. Size:325K jiejie micro
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JMSL1008AK 100V 6.7m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 82 A RDS(ON)_Typ (@ VGS = 10V) 6.7 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 8.5 m Halogen-free and RoHS-compliant Applications Pow... See More ⇒

5.2. Size:656K jiejie micro
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