All MOSFET. NDF02N60ZG Datasheet

 

NDF02N60ZG Datasheet and Replacement


   Type Designator: NDF02N60ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220FP
 

 NDF02N60ZG substitution

   - MOSFET ⓘ Cross-Reference Search

 

NDF02N60ZG Datasheet (PDF)

 ..1. Size:786K  cn vbsemi
 ndf02n60zg.pdf pdf_icon

NDF02N60ZG

NDF02N60ZGwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 5RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5.2 Compliant to RoHS

 5.1. Size:143K  onsemi
 ndf02n60z ndp02n60z ndd02n60z.pdf pdf_icon

NDF02N60ZG

NDF02N60Z, NDP02N60Z,NDD02N60ZN-Channel Power MOSFET600 V, 4.8 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested600 V4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (2

Datasheet: RTR025N05T , RYU002N05T306 , CS3N80ARH , NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL , NCE6602 , K2611 , CS3R50A4 , NTR4503NT1G , CS40N20A8 , CS40N20ANH , CS40N20FA9E , CS40N20FA9H , CS2N65FA9 , CS4N60A3R .

History: NDT014L | 8N80AF | TMPF5N60Z | KU024N06P | SIF12N65C | CRTE120N06L | IRFR110

Keywords - NDF02N60ZG MOSFET datasheet

 NDF02N60ZG cross reference
 NDF02N60ZG equivalent finder
 NDF02N60ZG lookup
 NDF02N60ZG substitution
 NDF02N60ZG replacement

 

 
Back to Top

 


 
.