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SI4425DY-T1-E3 Spec and Replacement


   Type Designator: SI4425DY-T1-E3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SO8

 SI4425DY-T1-E3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4425DY-T1-E3 Specs

 ..1. Size:826K  cn vbsemi
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SI4425DY-T1-E3

SI4425DY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Deskt... See More ⇒

 6.1. Size:95K  vishay
si4425dy.pdf pdf_icon

SI4425DY-T1-E3

Si4425DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) FEATURES 0.014 @ VGS = -10 V -11 D TrenchFETr Power MOSFET -30 -30 0.023 @ VGS = -4.5 V -8.5 Pb-free Available SO-8 S SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4425DY Si4425DY-T1 (with Tape and Reel) P-Channel MOSFET Si4425DY E3 (Lead (Pb)-Fr... See More ⇒

 7.1. Size:252K  vishay
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SI4425DY-T1-E3

Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET - 30 27 nC 100 % Rg Tested 0.0165 at VGS = 4.5 V - 15.2 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S SD 1 8 SD 2 ... See More ⇒

 7.2. Size:254K  vishay
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SI4425DY-T1-E3

Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET - 30 27 nC 100 % Rg Tested 0.0165 at VGS = 4.5 V - 15.2 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S SD 1 8 SD 2 ... See More ⇒

Detailed specifications: CS3R50A4 , NTR4503NT1G , CS40N20A8 , CS40N20ANH , CS40N20FA9E , CS40N20FA9H , CS2N65FA9 , CS4N60A3R , IRFZ46N , CS2N65A4 , CS4N60A4R , P2402CAG , CS25N06C4 , CS1N60C1HD , SI4463BDY-T1 , SI4465ADY-T1-E3 , CS4N60FA9R .

History: SQM85N10-10 | RJK1001DPP-E0 | HM85P02 | AP4409A | F7N60 | IPP111N15N3G

Keywords - SI4425DY-T1-E3 MOSFET specs

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