JMTG100N06D Datasheet and Replacement
Type Designator: JMTG100N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 186 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0129 Ohm
Package: PDFN5X6-8L-D
JMTG100N06D substitution
JMTG100N06D Datasheet (PDF)
jmtg100n06d.pdf
60V, 33A, 11.7m Dual N-channel Power Trench MOSFETJMTG100N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 33 ARDS(ON)_Typ(@VGS=10V 10.4 mWRDS(ON)_Typ(@VGS=4.5V 11.7 mWApplications Load Switch PWM Applicatio
jmtg100n06a.pdf
60V, 55A, 8.9m N-channel Power Trench MOSFETJMTG100N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.7 mWRDS(ON)_Typ(@VGS=4.5V 8.9 mWApplications Load Switch
jmtg100n03a.pdf
JMTG100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 30A Load SwitchRDS(ON)
jmtg100n04a.pdf
JMTG100N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 40A Load SwitchRDS(ON)
Datasheet: JMTG070N06A , JMTG075C03D , JMTG080N04D , JMTG080P03A , JMTG100C03D , JMTG100N03A , JMTG100N04A , JMTG100N06A , IRLZ44N , JMTG100P03A , JMSL1008AK , JMSL1008AKQ , JMSL1008AP , JMSL1008MKQ , JMSL1008PGQ , JMSL1009AG , JMSL1009AGQ .
History: P2804BVG | KP8M7 | DMG4511SK4 | FDR8305N
Keywords - JMTG100N06D MOSFET datasheet
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History: P2804BVG | KP8M7 | DMG4511SK4 | FDR8305N
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