CS25N06C4 Todos los transistores

 

CS25N06C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS25N06C4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 21.2 nC
   trⓘ - Tiempo de subida: 8.5 nS
   Cossⓘ - Capacitancia de salida: 73.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: TO252
 

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CS25N06C4 Datasheet (PDF)

 ..1. Size:748K  wuxi china
 cs25n06c4.pdf pdf_icon

CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 C4 General Description CS25N06 C4 the silicon N-channel Enhanced VDSS 60 V VDMOSFETs, is obtained by the high density Trench ID 25 A technology which reduce the conduction loss, improve switching PD 36.2 W RDS(ON)Typ 23 m performance and enhance the avalanche energy. This device is suitable for use as a load switch and P

 7.1. Size:708K  crhj
 cs25n06 b3.pdf pdf_icon

CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.2. Size:696K  crhj
 cs25n06 b8.pdf pdf_icon

CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.3. Size:697K  crhj
 cs25n06 b4.pdf pdf_icon

CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

MOSTRAR MÁS

Otros transistores... CS40N20FA9E , CS40N20FA9H , CS2N65FA9 , CS4N60A3R , SI4425DY-T1-E3 , CS2N65A4 , CS4N60A4R , P2402CAG , 8N60 , CS1N60C1HD , SI4463BDY-T1 , SI4465ADY-T1-E3 , CS4N60FA9R , SP8K31-TB , CS1N60A4H , SPN9971T252 , CS4N65A3R .

History: R6020ANX | SM1A24NSK | IRLML0030TRPBF | FDMS039N08B | KO3413 | AP15P15GM | SSM5H07TU

 

 
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