All MOSFET. CS25N06C4 Datasheet

 

CS25N06C4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS25N06C4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.2 nC
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 73.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO252

 CS25N06C4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS25N06C4 Datasheet (PDF)

 ..1. Size:748K  wuxi china
 cs25n06c4.pdf

CS25N06C4 CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 C4 General Description CS25N06 C4 the silicon N-channel Enhanced VDSS 60 V VDMOSFETs, is obtained by the high density Trench ID 25 A technology which reduce the conduction loss, improve switching PD 36.2 W RDS(ON)Typ 23 m performance and enhance the avalanche energy. This device is suitable for use as a load switch and P

 7.1. Size:708K  crhj
 cs25n06 b3.pdf

CS25N06C4 CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.2. Size:696K  crhj
 cs25n06 b8.pdf

CS25N06C4 CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.3. Size:697K  crhj
 cs25n06 b4.pdf

CS25N06C4 CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

 7.4. Size:697K  wuxi china
 cs25n06b4.pdf

CS25N06C4 CS25N06C4

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CS220N04A8H | MMBFJ175L

 

 
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