NTZD3155CT2G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTZD3155CT2G datasheet

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NTZD3155CT2G www.VBsemi.tw N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 10 V 0.6 TrenchFET Power MOSFET N-Channel 20 0.025 at VGS = 4.5 V 0.55 100 % Rg Tested 0.040 at VGS = - 10 V - 0.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.045 at

4.1. Size:114K onsemi
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NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http //onsemi.com Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance ID Max Low Threshold Voltage V(BR)DSS RDS(on) Typ (Note 1) ESD Protected Gate 0.4 W @ 4.5 V N-Channel 0.5 W @ 2.5 V 540 mA Small Footprint 1.

5.1. Size:215K onsemi
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NTZD3155C MOSFET Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA www.onsemi.com Features ID Max Leading Trench Technology for Low RDS(on) Performance V(BR)DSS RDS(on) Typ (Note 1) High Efficiency System Performance 0.4 W @ 4.5 V Low Threshold Voltage N-Channel 0.5 W @ 2.5 V 540 mA 20 V ESD Protected Gate 0.7 W @ 1.8 V Sma

5.2. Size:111K onsemi
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NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http //onsemi.com Leading Trench Technology for Low RDS(on) Performance ID Max High Efficiency System Performance V(BR)DSS RDS(on) Typ (Note 1) Low Threshold Voltage 0.4 W @ 4.5 V ESD Protected Gate N-Channel 0.5 W @ 2.5 V 540 mA 20 V Small Footpri

Otros transistores... CS1N60C1HD , SI4463BDY-T1 , SI4465ADY-T1-E3 , CS4N60FA9R , SP8K31-TB , CS1N60A4H , SPN9971T252 , CS4N65A3R , IRFP064N , NUD3160LT , CS4N65A4R , NCE6005AS , NCE603S , CS4N65FA9R , CS4N70A3D , CS4N70A3HD-G , CS4N70A4HD .