NTZD3155CT2G - параметры транзистора MOSFET, его аналоги, datasheet

NTZD3155CT2G Datasheet (PDF)

..1. Size:1681K cn vbsemi
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NTZD3155CT2Gwww.VBsemi.twN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 0.6 TrenchFET Power MOSFETN-Channel 200.025 at VGS = 4.5 V0.55 100 % Rg Tested0.040 at VGS = - 10 V - 0.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.045 at

4.1. Size:114K onsemi
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NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Featureshttp://onsemi.com Leading Trench Technology for Low RDS(on) Performance High Efficiency System PerformanceID Max Low Threshold Voltage V(BR)DSS RDS(on) Typ (Note 1) ESD Protected Gate0.4 W @ 4.5 VN-Channel0.5 W @ 2.5 V 540 mA Small Footprint 1.

5.1. Size:215K onsemi
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NTZD3155CMOSFET Small Signal,Complementary with ESDProtection, SOT-56320 V, 540 mA / -430 mAwww.onsemi.comFeaturesID Max Leading Trench Technology for Low RDS(on) PerformanceV(BR)DSS RDS(on) Typ (Note 1) High Efficiency System Performance0.4 W @ 4.5 V Low Threshold VoltageN-Channel0.5 W @ 2.5 V 540 mA20 V ESD Protected Gate0.7 W @ 1.8 V Sma

5.2. Size:111K onsemi
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NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Features http://onsemi.com Leading Trench Technology for Low RDS(on) PerformanceID Max High Efficiency System PerformanceV(BR)DSS RDS(on) Typ (Note 1) Low Threshold Voltage0.4 W @ 4.5 V ESD Protected Gate N-Channel0.5 W @ 2.5 V 540 mA20 V Small Footpri

Другие MOSFET... CS1N60C1HD , SI4463BDY-T1 , SI4465ADY-T1-E3 , CS4N60FA9R , SP8K31-TB , CS1N60A4H , SPN9971T252 , CS4N65A3R , 5N50 , NUD3160LT , CS4N65A4R , NCE6005AS , NCE603S , CS4N65FA9R , CS4N70A3D , CS4N70A3HD-G , CS4N70A4HD .