IRF634 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF634
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 41(max) nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220AB

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IRF634 Datasheet (PDF)

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irf634.pdf

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PD - 94975IRF634PbF Lead-Free02/03/04Document Number: 91034 www.vishay.com1IRF634PbFDocument Number: 91034 www.vishay.com2IRF634PbFDocument Number: 91034 www.vishay.com3IRF634PbFDocument Number: 91034 www.vishay.com4IRF634PbFDocument Number: 91034 www.vishay.com5IRF634PbFDocument Number: 91034 www.vishay.com6IRF634PbFTO-220AB Package Outline

..4. Size:153K vishay
irf634pbf sihf634.pdf

IRF634, SiHF634Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.45RoHS* Fast SwitchingQg (Max.) (nC) 41COMPLIANT Ease of ParallelingQgs (nC) 6.5Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

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..6. Size:114K inchange semiconductor
irf634.pdf

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features 1 2 3 With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON)0.45;ID=8.1A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 250 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25

0.1. Size:324K international rectifier
irf634s.pdf

PD - 95541IRF634SPbF Lead-FreeSMD-2207/21/04Document Number: 91035 www.vishay.com1IRF634SPbFDocument Number: 91035 www.vishay.com2IRF634SPbFDocument Number: 91035 www.vishay.com3IRF634SPbFDocument Number: 91035 www.vishay.com4IRF634SPbFDocument Number: 91035 www.vishay.com5IRF634SPbFDocument Number: 91035 www.vishay.com6IRF634SPbFPeak Diode

0.2. Size:244K international rectifier
irf634n-s-lpbf.pdf

PD - 95342IRF634NPbFIRF634NSPbFl Advanced Process TechnologyIRF634NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDl Fully Avalanche Rated VDSS = 250Vl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.435Gl Lead-FreeDescriptionID = 8.0AFifth Generation HEXFET Power MOSFETs from InternationalSRect

0.3. Size:301K international rectifier
irf634n.pdf

PD - 94310IRF634NIRF634NSIRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175C Operating TemperatureD Fast SwitchingVDSS = 250V Fully Avalanche Rated Ease of ParallelingRDS(on) = 0.435 Simple Drive RequirementsGDescriptionFifth Generation HEXFET Power MOSFETs from InternationalID = 8.0ARectifier utilize advanced processin

0.4. Size:643K fairchild semi
irf634b.pdf

December 2013IRF634BN-Channel BFET MOSFET250 V, 8.1 A, 450 mDescription FeaturesThese N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 29 nC)planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF)been especially tailored to

0.5. Size:859K fairchild semi
irf634b irfs634b.pdf

November 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

0.6. Size:790K samsung
irf634a.pdf

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

0.7. Size:158K vishay
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NSVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt Rating AvailableRDS(on) ()VGS = 10 V 0.435 175 C Operating TemperatureRoHS* Fast Switching COMPLIANTQg (Max.) (nC) 34 Fully Avalanche RatedQgs (nC) 6.5 Ease of ParallelingQgd (nC

0.8. Size:125K vishay
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NSVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Available Dynamic dV/dt Rating RoHS*RDS(on) ()VGS = 10 V 0.435 175 C Operating Temperature COMPLIANTQg (Max.) (nC) 34 Fast SwitchingQgs (nC) 6.5 Fully Avalanche Rated Ease of ParallelingQgd (nC

0.9. Size:168K vishay
irf634s sihf634s.pdf

IRF634S, SiHF634SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt RatingQgs (nC) 6.5 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

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