IRF634 Datasheet. Specs and Replacement
Type Designator: IRF634 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220AB
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IRF634 datasheet
..3. Size:2141K international rectifier
irf634pbf.pdf 
PD - 94975 IRF634PbF Lead-Free 02/03/04 Document Number 91034 www.vishay.com 1 IRF634PbF Document Number 91034 www.vishay.com 2 IRF634PbF Document Number 91034 www.vishay.com 3 IRF634PbF Document Number 91034 www.vishay.com 4 IRF634PbF Document Number 91034 www.vishay.com 5 IRF634PbF Document Number 91034 www.vishay.com 6 IRF634PbF TO-220AB Package Outline ... See More ⇒
..4. Size:153K vishay
irf634pbf sihf634.pdf
IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒
..5. Size:201K vishay
irf634 sihf634.pdf
IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D... See More ⇒
..6. Size:114K inchange semiconductor
irf634.pdf
MOSFET INCHANGE IRF634 N-channel mosfet transistor Features 1 2 3 With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON) 0.45 ;ID=8.1A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 250 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 ... See More ⇒
0.1. Size:324K international rectifier
irf634s.pdf
PD - 95541 IRF634SPbF Lead-Free SMD-220 7/21/04 Document Number 91035 www.vishay.com 1 IRF634SPbF Document Number 91035 www.vishay.com 2 IRF634SPbF Document Number 91035 www.vishay.com 3 IRF634SPbF Document Number 91035 www.vishay.com 4 IRF634SPbF Document Number 91035 www.vishay.com 5 IRF634SPbF Document Number 91035 www.vishay.com 6 IRF634SPbF Peak Diode... See More ⇒
0.2. Size:244K international rectifier
irf634n-s-lpbf.pdf
PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435 G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rect... See More ⇒
0.3. Size:301K international rectifier
irf634n.pdf
PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175 C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435 Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processin... See More ⇒
0.4. Size:643K fairchild semi
irf634b.pdf
December 2013 IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 m Description Features These N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 29 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF) been especially tailored to ... See More ⇒
0.6. Size:790K samsung
irf634a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒
0.7. Size:158K vishay
irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC... See More ⇒
0.8. Size:125K vishay
irf634nlpbf irf634nspbf.pdf
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Available Dynamic dV/dt Rating RoHS* RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 34 Fast Switching Qgs (nC) 6.5 Fully Avalanche Rated Ease of Paralleling Qgd (nC... See More ⇒
0.9. Size:168K vishay
irf634s sihf634s.pdf
IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing... See More ⇒
0.10. Size:193K vishay
irf634spbf sihf634s.pdf
IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing... See More ⇒
Detailed specifications: IRF625, IRF630, IRF630A, IRF630FI, IRF630S, IRF631, IRF632, IRF633, IRFP450, IRF634A, IRF634S, IRF635, IRF636A, IRF640, IRF640A, IRF640FI, IRF640L
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
