VB1240 Todos los transistores

 

VB1240 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VB1240

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0318 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de VB1240 MOSFET

- Selecciónⓘ de transistores por parámetros

 

VB1240 datasheet

 ..1. Size:600K  cn vbsemi
vb1240.pdf pdf_icon

VB1240

VB1240 www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.0318 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.0414 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

 0.1. Size:1430K  cn vbsemi
vb1240x.pdf pdf_icon

VB1240

VB1240X www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition = 4.5V 8 TrenchFET Gen III Power MOSFET at V 0.014 GS 20 9nC 100 % Rg Tested 0.018 7 at V = 2.5V GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D (SOT-23) G 1 G 3 D

 0.2. Size:711K  cn vbsemi
vb1240b.pdf pdf_icon

VB1240

VB1240B www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 TrenchFET power MOSFET RDS(on) max. ( ) at VGS = 4.5V 0.020 Low on-resistance RDS(on) max. ( ) at VGS = 2.5V 0.025 100 % Rg tested Qg typ. (nC 4.0 Material categorization ID (A) a, e 7 for definitions of compliance please see Configuration Single D SOT-23 (3) G 1 G

 9.1. Size:165K  onsemi
nsvb124xpdxv6t1g.pdf pdf_icon

VB1240

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

Otros transistores... PSMN035-150 , RFD12N06RLES , CS4N80A3HD , CS50N20ANH , CS540A3 , CS540A4 , IRLTS2242TR , CS540AR , IRF640N , CS5N20A3 , CS5N20A4 , CS5N20FA9 , NCE4688 , NCE3400A , NCE3404 , NCE40P05Y , CS16N65FA9H .

History: 2SK3058-ZJ

 

 

 

 

↑ Back to Top
.