CS6N60FA9H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS6N60FA9H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
Encapsulados: TO220F
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CS6N60FA9H datasheet
cs6n60fa9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60fa9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs6n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60f a9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Otros transistores... CS6N60A3D , CS6N60A3HDY , SI2306DS-T1 , SI2308DS-T1-GE3 , CS6N60A4H , NTMS4177PR , CS6N60A7H , CS6N60A8H , AON7410 , CS6N60FA9H-G , UT3N06G-AE3 , CS6N70A3D1-G , SI4559EY , CS6N70A3H , SI4922BDY , CS6N70A8D , CS6N70B3D1-G .
History: WSD2075DN | VP0300M | BLM7002K | 2SK1647S | BLM2302 | WMK14N70C4 | VBZM8N50
History: WSD2075DN | VP0300M | BLM7002K | 2SK1647S | BLM2302 | WMK14N70C4 | VBZM8N50
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