CS6N60FA9H Specs and Replacement
Type Designator: CS6N60FA9H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO220F
CS6N60FA9H substitution
- MOSFET ⓘ Cross-Reference Search
CS6N60FA9H datasheet
cs6n60fa9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
cs6n60fa9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
cs6n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
cs6n60f a9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
Detailed specifications: CS6N60A3D, CS6N60A3HDY, SI2306DS-T1, SI2308DS-T1-GE3, CS6N60A4H, NTMS4177PR, CS6N60A7H, CS6N60A8H, AON7410, CS6N60FA9H-G, UT3N06G-AE3, CS6N70A3D1-G, SI4559EY, CS6N70A3H, SI4922BDY, CS6N70A8D, CS6N70B3D1-G
Keywords - CS6N60FA9H MOSFET specs
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CS6N60FA9H substitution
CS6N60FA9H replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BRA4N65 | VN0106N7
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