CS6N60FA9H-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS6N60FA9H-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de CS6N60FA9H-G MOSFET
- Selecciónⓘ de transistores por parámetros
CS6N60FA9H-G datasheet
cs6n60fa9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60fa9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs6n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60f a9ty.pdf
Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Otros transistores... CS6N60A3HDY , SI2306DS-T1 , SI2308DS-T1-GE3 , CS6N60A4H , NTMS4177PR , CS6N60A7H , CS6N60A8H , CS6N60FA9H , 12N60 , UT3N06G-AE3 , CS6N70A3D1-G , SI4559EY , CS6N70A3H , SI4922BDY , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD .
History: WMJ26N65SR | WSD4050DN | BLM2301 | SI2319 | WSF12N10 | BRD50N03 | WSF3036A
History: WMJ26N65SR | WSD4050DN | BLM2301 | SI2319 | WSF12N10 | BRD50N03 | WSF3036A
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E
Popular searches
2sc485 | 2sd287 | 2sd438 | a1492 | hy4008 | ncep039n10m | 20n50 | 2sc869