CS6N60FA9H-G Datasheet and Replacement
Type Designator: CS6N60FA9H-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: TO220F
CS6N60FA9H-G substitution
CS6N60FA9H-G Datasheet (PDF)
cs6n60fa9h.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60fa9ty.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs6n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs6n60f a9ty.pdf

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: CS6N60A3HDY , SI2306DS-T1 , SI2308DS-T1-GE3 , CS6N60A4H , NTMS4177PR , CS6N60A7H , CS6N60A8H , CS6N60FA9H , 4N60 , UT3N06G-AE3 , CS6N70A3D1-G , SI4559EY , CS6N70A3H , SI4922BDY , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD .
History: NCEP026N10T | BUZ103SL
Keywords - CS6N60FA9H-G MOSFET datasheet
CS6N60FA9H-G cross reference
CS6N60FA9H-G equivalent finder
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CS6N60FA9H-G substitution
CS6N60FA9H-G replacement
History: NCEP026N10T | BUZ103SL



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