CS6N80A0H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CS6N80A0H Datasheet (PDF)

7.1. Size:355K wuxi china
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Silicon N-Channel Power MOSFET R CS6N80 ARR-G General Description VDSS 800 V CS6N80 ARR-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

7.2. Size:848K wuxi china
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Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

7.3. Size:675K wuxi china
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Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Otros transistores... CS6N70A3H , SI4922BDY , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , SMC3407S , P60NF06 , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , MTD6P10ET4 , MMSF7P03HDR2G .