CS6N80A0H Specs and Replacement
Type Designator: CS6N80A0H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO263
CS6N80A0H substitution
- MOSFET ⓘ Cross-Reference Search
CS6N80A0H datasheet
cs6n80arr-g.pdf
Silicon N-Channel Power MOSFET R CS6N80 ARR-G General Description VDSS 800 V CS6N80 ARR-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒
cs6n80a8.pdf
Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒
cs6n80arh.pdf
Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
Detailed specifications: CS6N70A3H , SI4922BDY , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , SMC3407S , AO4407 , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , MTD6P10ET4 , MMSF7P03HDR2G .
Keywords - CS6N80A0H MOSFET specs
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